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| SMD Type Small Signal Transistor FMMT2484 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 60 Volt VCEO. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Peak collector current Collector current Power dissipation Operating and storage temperature range Symbol VCBO VCEO VEBO ICM IC Ptot Tj,Tstg Rating 60 60 6 200 50 330 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cut-off current Collector-emitter saturation voltage * Base-emitter voltage * DC current gain * Output capacitance Input capacitance Symbol Testconditons Min 60 60 6 10 10 10 0.35 0.95 100 500 6 6 3 3 pF pF dB dB Typ Max Unit V V V nA iA nA V V V(BR)CBO IC=10iA,IE=0 V(BR)CEO IC=10mA,IB=0 V(BR)EBO IE=10iA,IC=0 ICBO IEBO VCB=45V,IE=0 VCB=45V,TamB=150 VEB=5V,IC=0 VCE(sat) IC=1A,IB=100iA VBE hFE Cobo Cibo IC=1A,VCE=5V IC=10iA,VCE=5V VCB=5V,f=140KHz VBE=0.5V,f=140KHz IC=200iA, VCE=5V, Rg=2kU f=1kHz, f=200Hz IC=200iA, VCE=5V, Rg=2kU f=30Hz to 15kHz at -3dB points Output capacitance NF * Pulse test: tp 300is; d 0.02. Marking Marking 4G +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 |
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